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This article is cited in 2 scientific papers (total in 2 papers)
CONDENSED MATTER
Metallization in the molten and solid state and phase diagrams
of the GeSe$_2$ and GeS$_2$ under high pressure
V. V. Brazhkina, E. Bychkovb, M. V. Kondrina a Institute for High Pressure Physics, Russian Academy of Sciences
b LPCA, UMR 8101 CNRS, Universite du Littoral
Abstract:
We found that under high pressure, the GeSe$_2$ and GeS$_2$ melts pass into
the metallic state.
In the vicinity of the melting curves, their metallization begins at $3.5$ and
$7$ GPa, respectively.
The position of the semiconductor – metal transition line on the phase diagram
for GeSe$_2$ liquid is
established. The GeS$_2$-II and GeSe$_2$-III high-pressure crystalline
modifications are
semiconductors, whereas the GeSe$_2$-III modification at pressures exceeding
$3.5$–$4$ GPa is a metal
($\sigma\approx10^3\,\Omega^{-1}\cdot\text{cm}^{-1}$).
The $P$, $T$ phase diagrams for these compounds are constructed in the
pressure range up to $10$ GPa. Metallization during the GeSe$_2$-II–GeSe$_2$-III
transition is evidently
responsible for the small jump of entropy and the corresponding almost vertical
slope of the transition line.
Received: 20.08.2014
Citation:
V. V. Brazhkin, E. Bychkov, M. V. Kondrin, “Metallization in the molten and solid state and phase diagrams
of the GeSe$_2$ and GeS$_2$ under high pressure”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:7 (2014), 506–509; JETP Letters, 100:7 (2014), 451–454
Linking options:
https://www.mathnet.ru/eng/jetpl4138 https://www.mathnet.ru/eng/jetpl/v100/i7/p506
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Abstract page: | 216 | Full-text PDF : | 43 | References: | 33 | First page: | 4 |
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