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This article is cited in 10 scientific papers (total in 10 papers)
CONDENSED MATTER
Effect of surface defects and few-atomic steps on the local density of
states of the atomically-clean surface of topological insulator Bi$_2$Se$_3$
A. Yu. Dmitrievab, N. I. Fedotovab, V. F. Nasretdinovab, S. V. Zaitsev-Zotovba a Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
b Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow
Abstract:
The results of ultra-high vacuum low-temperature scanning-tunneling microscopy
(STM) and spectroscopy (STS) of atomically clean (111) surface of the
topological insulator Bi$_2$Se$_3$ are presented. We observed several types of
new subsurface defects whose location and charge correspond to $p$-type conduction
of grown crystals. The sign of the thermoelectric effect also indicates $p$-type
conduction. STM and STS measurements demonstrate that the chemical potential is
always located inside the bulk band gap.
We also observed changes in the local density of states in the vicinity of the
quintuple layer steps at the studied surface. This changes correspond either to
the shift of the Dirac cone position or to the shift of the chemical potential
near the step edge.
Received: 14.08.2014
Citation:
A. Yu. Dmitriev, N. I. Fedotov, V. F. Nasretdinova, S. V. Zaitsev-Zotov, “Effect of surface defects and few-atomic steps on the local density of
states of the atomically-clean surface of topological insulator Bi$_2$Se$_3$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:6 (2014), 442–446; JETP Letters, 100:6 (2014), 398–402
Linking options:
https://www.mathnet.ru/eng/jetpl4128 https://www.mathnet.ru/eng/jetpl/v100/i6/p442
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