Conductance anisotropy and the power-law current-voltage characteristics along and across the layers of the TiS3 quasi-one-dimensional layered semiconductor

Nonlinear conductance along the crystallographic axis c across the layered whiskers of the TiS3 quasi-one-dimensional semiconductor has been discovered. It has been shown that the current-voltage characteristics in all three directions along the $a$, $b$, and $c$ axes obey a power law with the exponent increasing with a decrease in temperature. Possible mechanisms of the nonlinear conductance including the motion of condensed electrons, excitation and dissociation of electron-hole pairs in two-dimensional layers, and interlayer tunneling under the conditions of the Coulomb blockade with a charge spreading over the layers are considered.