|
Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2009, Volume 89, Issue 7, Pages 396–401
(Mi jetpl397)
|
|
|
|
This article is cited in 6 scientific papers (total in 6 papers)
CONDENSED MATTER
Nondiffusion atomic ordering in the low-temperature deposition of copper
I. G. Marchenkoa, I. I. Marchenkob a National Science Centre Kharkov Institute of Physics and Technology
b Khar'kov Polytechnical University
Abstract:
A new mechanism of atomic ordering in the low-temperature homoepitaxial deposition of copper onto a close-packed (111) plane has been discovered by means of molecular-dynamics simulation. This nondiffusion mechanism is caused by the collective motion of clusters along the dislocation lines of partial Shockley dislocations. We predict the existence of dislocation-induced coalescence, which is an increase in the mean size of face-centered cubic (fcc) clusters owing to a decrease in the number of hexagonal close-packed (hcp) clusters due to the motion of surface dislocations.
Received: 04.02.2009 Revised: 26.02.2009
Citation:
I. G. Marchenko, I. I. Marchenko, “Nondiffusion atomic ordering in the low-temperature deposition of copper”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:7 (2009), 396–401; JETP Letters, 89:7 (2009), 337–341
Linking options:
https://www.mathnet.ru/eng/jetpl397 https://www.mathnet.ru/eng/jetpl/v89/i7/p396
|
|