E. B. Olshanetskii, Z. D. Kvon, M. V. Èntin, L. I. Magarill, N. N. Mikhailov, I. O. Parm, S. A. Dvoretskii, “Scattering processes in a two-dimensional semimetal”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:6 (2009), 338–342; JETP Letters, 89:6 (2009), 290

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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2009, Volume 89, Issue 6, Pages 338–342 (Mi jetpl387)

This article is cited in 44 scientific papers (total in 44 papers)

CONDENSED MATTER

Scattering processes in a two-dimensional semimetal

E. B. Olshanetskii^a, Z. D. Kvon^ba, M. V. Èntin^a, L. I. Magarill^ab, N. N. Mikhailov^a, I. O. Parm^a, S. A. Dvoretskii^a

^a Institute of Semiconductor Physics of SB RAS
^b Novosibirsk State University

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Abstract: The scattering mechanisms in a two-dimensional semimetal based on a HgTe quantum well, where the electron and hole densities are controlled over a wide range by applying the gate voltage, have been studied. It is shown that impurity scattering prevails in this system at low temperatures. Interparticle scattering (in this case, electrons and holes) has been observed to directly affect the resistance of the metal.

Received: 12.02.2009

English version:
Journal of Experimental and Theoretical Physics Letters, 2009, Volume 89, Issue 6, Pages 290–293
DOI: https://doi.org/10.1134/S002136400906006X

Bibliographic databases:

Document Type: Article

PACS: 73.43.Qt, 73.63.Hs

Language: Russian

Citation: E. B. Olshanetskii, Z. D. Kvon, M. V. Èntin, L. I. Magarill, N. N. Mikhailov, I. O. Parm, S. A. Dvoretskii, “Scattering processes in a two-dimensional semimetal”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:6 (2009), 338–342; JETP Letters, 89:6 (2009), 290–293

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This publication is cited in the following 44 articles:

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Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki

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