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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2014, Volume 100, Issue 3, Pages 186–193
DOI: https://doi.org/10.7868/S0370274X14150053 (Mi jetpl3794) 		 
This article is cited in 1 scientific paper (total in 1 paper)

CONDENSED MATTER

Positive magnetoresistance peaked at ferromagnetic transition in Mn-doped quantum wells GaAs/AlGaAs

N. V. Agrinskayaa, V. A. Berezotetsab, V. I. Kozuba

a Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
b International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw
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DOI: https://doi.org/10.7868/S0370274X14150053
Abstract: A large positive magnetoresistance peaked at the Curie temperature was observed in quantum well structures GaAs/AlGaAs doped by Mn. We suggest a new mechanism of magnetoresistance within low $T_c$ ferromagnets resulting from a pronounced dependence of spin polarization at the vicinity of $T_c$ on the external magnetic field. As a result, any contribution to resistance dependent on the Zeeman splitting of the spin subbands is amplified with respect to the direct effect of the external field. In our case we believe that the corresponding contribution is related to the upper Hubbard band. We propose that the mechanism considered here can be exploited as the mark of ferromagnetic transition.
Received: 26.06.2014
English version:
Journal of Experimental and Theoretical Physics Letters, 2014, Volume 100, Issue 3, Pages 167–173
DOI: https://doi.org/10.1134/S0021364014150028
Bibliographic databases:
Document Type: Article
Language: English
Citation: N. V. Agrinskaya, V. A. Berezotets, V. I. Kozub, “Positive magnetoresistance peaked at ferromagnetic transition in Mn-doped quantum wells GaAs/AlGaAs”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:3 (2014), 186–193; JETP Letters, 100:3 (2014), 167–173
Citation in format AMSBIB
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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