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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2009, Volume 89, Issue 5, Pages 274–278 (Mi jetpl375)  

CONDENSED MATTER

Singularities of the dielectric function of InN in the region of a direct optical transition

L. A. Falkovskyab

a L. D. Landau Institute for Theoretical Physics, Russian Academy of Sciences
b Institute for High Pressure Physics, Russian Academy of Sciences
References:
Abstract: The dispersion of the dielectric function of InN with the wurtzite structure in the frequency region near the fundamental energy gap has been analyzed with the inclusion of temperature and carrier density effects. The linearity of the electron spectrum in a wide energy range leads to a logarithmic singularity of the real part of the dielectric function, which is associated with the direct electronic transitions and, correspondingly, to an anomalously large dielectric constant. The imaginary part becomes constant above the absorption threshold. The values calculated without any free parameters are in good agreement with the experimental data and ab initio calculations.
Received: 12.01.2009
English version:
Journal of Experimental and Theoretical Physics Letters, 2009, Volume 89, Issue 5, Pages 233–237
DOI: https://doi.org/10.1134/S002136400905004X
Bibliographic databases:
Document Type: Article
PACS: 71.15.Mb, 71.20.Nr, 78.20.Ci
Language: Russian


Citation: L. A. Falkovsky, “Singularities of the dielectric function of InN in the region of a direct optical transition”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:5 (2009), 274–278; JETP Letters, 89:5 (2009), 233–237
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