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This article is cited in 8 scientific papers (total in 8 papers)
OPTICS AND NUCLEAR PHYSICS
Optical characteristics of an epitaxial Fe$_3$Si/Si(111) iron silicide film
I. A. Tarasovab, Z. I. Popovba, S. N. Varnakovba, M. S. Molokeevb, A. S. Fedorovb, I. A. Yakovlevb, D. A. Fedorovb, S. G. Ovchinnikovba a M. F. Reshetnev Siberian State Aerospace University
b L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
Abstract:
The dispersion of the relative permittivity $\varepsilon$ of a $27$-nm-thick epitaxial Fe$_3$Si iron silicide film has been measured within the $E = 1.16{-}4.96$ eV energy range using the spectroscopic ellipsometry technique. The experimental data are compared to the relative permittivity calculated in the framework of the density functional theory using the GGA-PBE approximation. For Fe$_3$Si, the electronic structure and the electronic density of states (DOS) are calculated. The analysis of the frequencies corresponding to the transitions between the DOS peaks demonstrates qualitative agreement with the measured absorption peaks. The analysis of the single wavelength laser ellipsometry data obtained in the course of the film growth demonstrates that a continuous layer of Fe$_3$Si iron silicide film is formed if the film thickness achieves $5$ nm.
Received: 18.04.2014
Citation:
I. A. Tarasov, Z. I. Popov, S. N. Varnakov, M. S. Molokeev, A. S. Fedorov, I. A. Yakovlev, D. A. Fedorov, S. G. Ovchinnikov, “Optical characteristics of an epitaxial Fe$_3$Si/Si(111) iron silicide film”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:10 (2014), 651–655; JETP Letters, 99:10 (2014), 565–569
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https://www.mathnet.ru/eng/jetpl3736 https://www.mathnet.ru/eng/jetpl/v99/i10/p651
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