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This article is cited in 10 scientific papers (total in 10 papers)
CONDENSED MATTER
High-pressure thermoelectric characteristics of Bi$_2$Te$_3$ semiconductor with different charge carrier densities
V. V. Brazhkin, A. I. Orlov Institute for High Pressure Physics, Russian Academy of Sciences
Abstract:
The measurements of the absolute values of the thermopower and of the relative electrical resistance have been performed for $n$ type Bi$_2$Te$_3$ under hydrostatic pressure up to $9$ GPa at room temperature. Under pressures exceeding $5$ GPa and up to the phase transition (at $7$ GPa), the samples with the charge carrier density below $10^{19}\,$cm$^{-3}$ exhibit an anomalous growth of the thermopower. For the purest sample ($n=10^{18}\,$cm$^{-3}$), the thermopower is as high as $+150\,\mu$V/K. The pressure dependence of the electrical resistance for $n$-Bi$_2$Te$_3$ does not exhibit any anomalies up to the pressure corresponding to the phase transition ($7$ GPa). Thus, the state with the giant thermoelectric efficiency is found in Bi$_2$Te$_3$ under pressure before the phase transition.
Received: 30.01.2014
Citation:
V. V. Brazhkin, A. I. Orlov, “High-pressure thermoelectric characteristics of Bi$_2$Te$_3$ semiconductor with different charge carrier densities”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:5 (2014), 325–328; JETP Letters, 99:5 (2014), 283–285
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https://www.mathnet.ru/eng/jetpl3680 https://www.mathnet.ru/eng/jetpl/v99/i5/p325
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Abstract page: | 263 | Full-text PDF : | 73 | References: | 44 | First page: | 7 |
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