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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2014, Volume 99, Issue 4, Pages 231–236
DOI: https://doi.org/10.7868/S0370274X14040067 (Mi jetpl3664) 		 
This article is cited in 9 scientific papers (total in 9 papers)

CONDENSED MATTER

Semiconductor artificial graphene: Effects in weak magnetic fields

O. A. Tkachenko, V. A. Tkachenko

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (1327 kB) Citations (9)
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DOI: https://doi.org/10.7868/S0370274X14040067
Abstract: Two-dimensional quantum transport through the stripe of the hexagonal lattice of antidots built in the multimode channel in the GaAs/AlGaAs structure has been studied numerically. It has been found that the low perpendicular magnetic fields ($\sim 3$ mT) suppress the bulk currents and cause the appearance of the edge Landau states and high positive magnetic resistance on both sides of the Dirac point. Tamm edge states are present in some energy intervals; as a result, the $\approx 4e^2/h$-amplitude oscillations caused by the quantization of these states on the lattice length are added to the steps of the conductance quantization $G_n=(2|n|+1)2e^2/h$.
Received: 20.01.2014
English version:
Journal of Experimental and Theoretical Physics Letters, 2014, Volume 99, Issue 4, Pages 204–209
DOI: https://doi.org/10.1134/S0021364014040146
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. A. Tkachenko, V. A. Tkachenko, “Semiconductor artificial graphene: Effects in weak magnetic fields”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:4 (2014), 231–236; JETP Letters, 99:4 (2014), 204–209
Citation in format AMSBIB
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    • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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