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This article is cited in 9 scientific papers (total in 9 papers)
CONDENSED MATTER
Semiconductor artificial graphene: Effects in weak magnetic fields
O. A. Tkachenko, V. A. Tkachenko Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
Two-dimensional quantum transport through the stripe of the hexagonal lattice of antidots built in the multimode channel in the GaAs/AlGaAs structure has been studied numerically. It has been found that the low perpendicular magnetic fields ($\sim 3$ mT) suppress the bulk currents and cause the appearance of the edge Landau states and high positive magnetic resistance on both sides of the Dirac point. Tamm edge states are present in some energy intervals; as a result, the $\approx 4e^2/h$-amplitude oscillations caused by the quantization of these states on the lattice length are added to the steps of the conductance quantization $G_n=(2|n|+1)2e^2/h$.
Received: 20.01.2014
Citation:
O. A. Tkachenko, V. A. Tkachenko, “Semiconductor artificial graphene: Effects in weak magnetic fields”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:4 (2014), 231–236; JETP Letters, 99:4 (2014), 204–209
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https://www.mathnet.ru/eng/jetpl3664 https://www.mathnet.ru/eng/jetpl/v99/i4/p231
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Abstract page: | 231 | Full-text PDF : | 43 | References: | 41 | First page: | 22 |
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