|
OPTICS AND NUCLEAR PHYSICS
Photoluminescence kinetics of multiperiod GaAs/AlGaAs structures with asymmetric barriers promising for making unipolar lasers
Yu. A. Aleshchenkoab, V. V. Kapaeva, M. V. Kochieva, Yu. G. Sadof'eva, V. A. Tsvetkova a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b National Engineering Physics Institute "MEPhI", Moscow
Abstract:
Photoluminescence kinetics in multiperiod GaAs/AlGaAs quantum-well structures with asymmetric barrier heights has been investigated. Owing to the barrier asymmetry, a time constant of nonradiative recombination between the laser subbands of $9$ ps has been achieved, which is record long for unipolar lasers and exceeds the nonradiative relaxation time constant of the lower laser subband. This provides population inversion in the system. Efficient suppression of an unwanted cascade transition between the laser subbands via quasi-continuum states has been demonstrated.
Received: 29.01.2014
Citation:
Yu. A. Aleshchenko, V. V. Kapaev, M. V. Kochiev, Yu. G. Sadof'ev, V. A. Tsvetkov, “Photoluminescence kinetics of multiperiod GaAs/AlGaAs structures with asymmetric barriers promising for making unipolar lasers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:4 (2014), 207–212; JETP Letters, 99:4 (2014), 182–186
Linking options:
https://www.mathnet.ru/eng/jetpl3660 https://www.mathnet.ru/eng/jetpl/v99/i4/p207
|
|