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This article is cited in 11 scientific papers (total in 11 papers)
CONDENSED MATTER
Nuclear spin relaxation mediated by Fermi-edge electrons in $n$-type GaAs
M. Kotura, R. I. Dzhioeva, K. V. Kavokinba, V. L. Koreneva, B. R. Namozova, P. E. Paka, Yu. G. Kusrayeva a Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
b Saint Petersburg State University
Abstract:
A method based on the optical orientation technique was developed
to measure the nuclear-spin lattice relaxation time $T_1$ in semiconductors.
It was applied to bulk $n$-type GaAs, where $T_1$ was measured after switching
off the optical excitation in magnetic fields from $400$ to $1200$ G
at low ($<30\,$K) temperatures. The spin-lattice relaxation of nuclei in
the studied
sample with $n_D = 9 \cdot 10^{16}$ cm$^{-3}$ was found to be determined by
hyperfine scattering of itinerant electrons (Korringa mechanism) which predicts
invariability of $T_1$ with the change of magnetic field and linear dependence
of the relaxation rate on temperature. This result extends the experimentally
verified applicability of the Korringa relaxation law in degenerate
semiconductors,
previously studied in strong magnetic fields (several Tesla), to the moderate
field range.
Received: 16.12.2013
Citation:
M. Kotur, R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, B. R. Namozov, P. E. Pak, Yu. G. Kusrayev, “Nuclear spin relaxation mediated by Fermi-edge electrons in $n$-type GaAs”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:1 (2014), 40–44; JETP Letters, 99:1 (2014), 37–41
Linking options:
https://www.mathnet.ru/eng/jetpl3632 https://www.mathnet.ru/eng/jetpl/v99/i1/p40
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Abstract page: | 300 | Full-text PDF : | 68 | References: | 60 | First page: | 12 |
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