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This article is cited in 22 scientific papers (total in 22 papers)
CONDENSED MATTER
Dynamics of the BiTeI lattice at high pressures
Yu. S. Ponosova, T. V. Kuznetsovaa, O. E. Tereshchenkobcd, K. A. Kokhdbe, E. V. Chulkovbfg a Institute of Metal Physics, Ural Division of the Russian Academy of Sciences
b Tomsk State University
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
d Novosibirsk State University
e Sobolev Institute of Geology and Mineralogy, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
f Donostia International Physics Center
g Departamento de Física de Materiales, Facultad de Quimica, UPV/EHU, San Sebastian, Basque Country
Abstract:
Raman measurements of the phonon spectrum of BiTeI at pressures of up to $20$ GPa have been performed. A decrease in the linewidth of E$^2$ vibration by almost a factor of 2 with an increase in the pressure to $3$ GPa has been detected. The frequencies of all four Raman active modes increase monotonically with the pressure. These lines are observed in spectra up to $\sim$8 GPa. Sharp change in the spectrum occurs at pressures of $8$–$9$ GPa, indicating a transition to the high-pressure phase, which holds up to $20$ GPa. This transition is reversible and hardly has any hysteresis. A sample in the high-pressure phase is single crystal.
Received: 19.08.2013 Revised: 07.10.2013
Citation:
Yu. S. Ponosov, T. V. Kuznetsova, O. E. Tereshchenko, K. A. Kokh, E. V. Chulkov, “Dynamics of the BiTeI lattice at high pressures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 98:9 (2013), 626–630; JETP Letters, 98:9 (2013), 557–561
Linking options:
https://www.mathnet.ru/eng/jetpl3565 https://www.mathnet.ru/eng/jetpl/v98/i9/p626
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Abstract page: | 240 | Full-text PDF : | 69 | References: | 44 | First page: | 6 |
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