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This article is cited in 3 scientific papers (total in 3 papers)
CONDENSED MATTER
Electronic and magnetic properties of new 2D diluted
magnetic semiconductor La$_{1-x}$Ba$_x$Zn$_{1-x}$Mn$_x$AsO from
first-principles calculations
V. V. Bannikov, A. L. Ivanovskii Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences
Abstract:
Very recently, on the example of hole- and spin-doped semiconductor LaZnAsO, quite
an unexpected area of potential applications of quasi-two-dimensional 1111-like phases
was proposed (C. Ding et al., PRB 88:041102R, 2013) – as a promising platform for
searching for new diluted magnetic semiconductors (DMSs). In this Letter, by means of
the first-principles calculations, we have examined in detail the electronic and magnetic
properties of LaZnAsO alloyed with Ba and Mn. Our results demonstrate that Ba or Mn
doping transforms the parent non-magnetic semiconductor LaZnAsO into non-magnetic
metal or magnetic semiconductor, respectively. On the other hand, the joint effect of
these dopants (i.e. co-doping Ba + Mn) leads to transition of La$_{0.89}$Ba$_{0.11}$Zn$_{0.89}$Mn$_{0.11}$AsO
into the state of magnetic metal, which is formed by alternately stacked semiconducting
non-magnetic blocks [La$_{0.89}$Ba$_{0.11}$O]
and metallic-like magnetic blocks [Zn$_{0.89}$Mn$_{0.11}$As].
Received: 12.08.2013
Citation:
V. V. Bannikov, A. L. Ivanovskii, “Electronic and magnetic properties of new 2D diluted
magnetic semiconductor La$_{1-x}$Ba$_x$Zn$_{1-x}$Mn$_x$AsO from
first-principles calculations”, Pis'ma v Zh. Èksper. Teoret. Fiz., 98:7 (2013), 448–451; JETP Letters, 98:7 (2013), 393–396
Linking options:
https://www.mathnet.ru/eng/jetpl3535 https://www.mathnet.ru/eng/jetpl/v98/i7/p448
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Abstract page: | 150 | Full-text PDF : | 40 | References: | 31 | First page: | 4 |
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