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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2013, Volume 98, Issue 5, Pages 309–315
DOI: https://doi.org/10.7868/S0370274X13170062
(Mi jetpl3510)
 

This article is cited in 18 scientific papers (total in 18 papers)

CONDENSED MATTER

Novel approach to tailoring the electronic properties of single-walled carbon nanotubes by the encapsulation of high-melting gallium selenide using a single-step process

M. V. Kharlamova

M. V. Lomonosov Moscow State University, Department of Materials Science
References:
Abstract: A single-step method of filling the channels of single-walled carbon nanotubes with the melt of refractory GaSe is proposed and successfully implemented. The filled nanotubes are investigated by optical absorption spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. It is found that charge transfer from the nanotube walls to embedded GaSe accompanied by lowering of the Fermi level in nanotubes occurs in the obtained nanocomposite; i.e., acceptor doping of nanotubes takes place.
Received: 18.07.2013
Revised: 07.08.2013
English version:
Journal of Experimental and Theoretical Physics Letters, 2013, Volume 98, Issue 5, Pages 272–277
DOI: https://doi.org/10.1134/S0021364013180069
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. V. Kharlamova, “Novel approach to tailoring the electronic properties of single-walled carbon nanotubes by the encapsulation of high-melting gallium selenide using a single-step process”, Pis'ma v Zh. Èksper. Teoret. Fiz., 98:5 (2013), 309–315; JETP Letters, 98:5 (2013), 272–277
Citation in format AMSBIB
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  • This publication is cited in the following 18 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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