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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2013, Volume 97, Issue 10, Pages 660–664
DOI: https://doi.org/10.7868/S0370274X13100044 (Mi jetpl3425) 		 
This article is cited in 4 scientific papers (total in 4 papers)

CONDENSED MATTER

Spin relaxation in GaAs/AlGaAs quantum wells in the vicinity of odd filling factors

A. V. Shchepetil'nikovab, Yu. A. Nefedova, I. V. Kukushkina

a Institute of Solid State Physics, Russian Academy of Sciences
b Moscow Institute of Physics and Technology
Full-text PDF (253 kB) Citations (4)
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DOI: https://doi.org/10.7868/S0370274X13100044
Abstract: Electron spin resonance in GaAs/AlGaAs quantum wells in the vicinity of odd filling factors $\nu=3,$, 5, and 7 is investigated. The spin relaxation time of two-dimensional electrons is determined from the width of the microwave resonance absorption line. Dependences of the spin relaxation time on the filling factor, temperature, and orientation of the magnetic field are investigated. The spin relaxation time decreases noticeably upon deviation from odd filling factors, and its maximum value depends on the angle between the magnetic field and the plane of the two-dimensional electron gas.
Received: 02.04.2013
English version:
Journal of Experimental and Theoretical Physics Letters, 2013, Volume 97, Issue 10, Pages 574–578
DOI: https://doi.org/10.1134/S002136401310010X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Shchepetil'nikov, Yu. A. Nefedov, I. V. Kukushkin, “Spin relaxation in GaAs/AlGaAs quantum wells in the vicinity of odd filling factors”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:10 (2013), 660–664; JETP Letters, 97:10 (2013), 574–578
Citation in format AMSBIB
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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