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CONDENSED MATTER
Ab initio study of surface electronic structure of phosphorus
donor imputiry on Ge(111)-(2$\times$1) surface
S. V. Savinova, A. I. Oreshkina, S. I. Oreshkinb a M. V. Lomonosov Moscow State University, Faculty of Physics
b P. K. Sternberg Astronomical Institute, M. V. Lomonosov Moscow State University
Abstract:
We present the results of numerical modeling of Ge(111)-(2$\times$1) surface
electronic properties in vicinity of P donor impurity atom near the surface. We
show, that despite of well established bulk donor impurity energy level position
at the very bottom of conduction band, surface donor impurity might produce
energy level below Fermi energy, depending on impurity atom local
environment. It was demonstrated, that impurity, located in subsurface atomic
layers, is visible in STM experiment. The quasi-1D character of impurity image,
observed in STM experiments, is confirmed by our computer simulations.
Received: 28.01.2013
Citation:
S. V. Savinov, A. I. Oreshkin, S. I. Oreshkin, “Ab initio study of surface electronic structure of phosphorus
donor imputiry on Ge(111)-(2$\times$1) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:7 (2013), 458–464; JETP Letters, 97:7 (2013), 393–399
Linking options:
https://www.mathnet.ru/eng/jetpl3391 https://www.mathnet.ru/eng/jetpl/v97/i7/p458
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Abstract page: | 158 | Full-text PDF : | 45 | References: | 30 | First page: | 1 |
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