|
This article is cited in 10 scientific papers (total in 10 papers)
CONDENSED MATTER
Fine structure of the exciton states in InAs quantum dots
A. V. Gaislera, A. S. Yaroshevicha, I. A. Derebezova, A. K. Kalagina, A. K. Bakarova, A. I. Toropova, D. V. Shcheglovab, V. A. Gaislerac, A. V. Latyshevab, A. L. Aseeva a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
b Novosibirsk State University
c Novosibirsk State Technical University
Abstract:
The fine structure of the exciton states in InAs quantum dots grown by the Stranski–Krastanov method with short growth interruptions has been studied by microphotoluminescence at cryogenic temperatures. It has been demonstrated that, with increasing quantum-dot size, the splitting of the exciton states increases steadily to $\sim10^{2}\,\mu$eV. It has been shown that, in the exciton energy range of $1.3$–$1.4$ eV, the magnitude of this splitting is comparable to the natural width of the exciton lines. This result is important for the development of entangled photon pair emitters based on InAs quantum dots.
Received: 05.02.2013
Citation:
A. V. Gaisler, A. S. Yaroshevich, I. A. Derebezov, A. K. Kalagin, A. K. Bakarov, A. I. Toropov, D. V. Shcheglov, V. A. Gaisler, A. V. Latyshev, A. L. Aseev, “Fine structure of the exciton states in InAs quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:5 (2013), 313–318; JETP Letters, 97:5 (2013), 274–278
Linking options:
https://www.mathnet.ru/eng/jetpl3370 https://www.mathnet.ru/eng/jetpl/v97/i5/p313
|
Statistics & downloads: |
Abstract page: | 245 | Full-text PDF : | 74 | References: | 34 | First page: | 9 |
|