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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2013, Volume 97, Issue 2, Pages 93–97
DOI: https://doi.org/10.7868/S0370274X13020057 (Mi jetpl3334) 		 
This article is cited in 11 scientific papers (total in 11 papers)

CONDENSED MATTER

Radiative and nonradiative recombination of self-trapped exciton on silicon nanocrystal interface

A. V. Gert, I. N. Yassievich

Ioffe Physico-Technical Institute, Russian Academy of Sciences
Full-text PDF (198 kB) Citations (11)
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DOI: https://doi.org/10.7868/S0370274X13020057
Abstract: The theory of the multiphonon and radiative recombination of a self-trapped exciton on the interface of a silicon nanocrystal in a SiO2 matrix is developed. Self-trapped excitons play a key role in the hot carrier dynamics in nanocrystals under photoexcitation. The ratio of the probabilities of the multiphonon and radiative recombination of the self-trapped exciton is estimated. The probabilities of exciton tunnel transition from the self-trapped state to a nanocrystal are calculated for nanocrystals of various sizes. The infrared range spectrum of the luminescence of the self-trapped exciton is obtained.
Received: 07.12.2012
English version:
Journal of Experimental and Theoretical Physics Letters, 2013, Volume 97, Issue 2, Pages 87–91
DOI: https://doi.org/10.1134/S0021364013020057
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Gert, I. N. Yassievich, “Radiative and nonradiative recombination of self-trapped exciton on silicon nanocrystal interface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:2 (2013), 93–97; JETP Letters, 97:2 (2013), 87–91
Citation in format AMSBIB
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  • https://www.mathnet.ru/eng/jetpl3334
  • https://www.mathnet.ru/eng/jetpl/v97/i2/p93
    • This publication is cited in the following 11 articles:
    1. Huai-Yang Sun, Lin Xiong, Hong Jiang, Chemical Physics Reviews, 4:3 (2023)  crossref
    2. G. N. Makarov, Phys. Usp., 60:3 (2017), 227–258  mathnet  mathnet  crossref  crossref  isi  scopus
    3. Andreev B.A., Yablonskiy A.N., Krasilnik Z.F., Ershov A.V., Grachev D.A., Gert A.V., Gusev O.B., Yassievich I.N., Phys. Status Solidi B-Basic Solid State Phys., 253:11 (2016), 2150–2153  crossref  isi  elib  scopus
    4. Anton V. Gert, Irina N. Yassievich, Lith. J. Phys., 55:4 (2016)  crossref
    5. Gert A., Yassievich I., Phys. Status Solidi B-Basic Solid State Phys., 252:1 (2015), 130–133  crossref  adsnasa  isi  elib  scopus
    6. Gert A.V. Yassievich I.N., Semiconductors, 49:4 (2015), 492–497  crossref  adsnasa  isi  elib  scopus
    7. Gert A.V., Yassievich I.N., Lith. J. Phys., 55:4 (2015), 292–296  isi  elib
    8. Gusev O.B., Ershov A.V., Grachev D.A., Andreev B.A., Yablonskiy A.N., J. Exp. Theor. Phys., 118:5 (2014), 728–734  crossref  adsnasa  isi  elib  scopus
    9. Prokofiev A.A., Poddubny A.N., Yassievich I.N., Phys. Rev. B, 89:12 (2014), 125409  crossref  adsnasa  isi  elib  scopus
    10. Barbagiovanni E.G., Lockwood D.J., Simpson P.J., Goncharova L.V., Appl. Phys. Rev., 1:1 (2014), 011302  crossref  isi  elib  scopus
    11. de Boer W. D. A. M., de Jong E. M. L. D., Timmerman D., Gregorkiewicz T., Zhang H., Buma W.J., Poddubny A.N., Prokofiev A.A., Yassievich I.N., Phys. Rev. B, 88:15 (2013), 155304  crossref  adsnasa  isi  scopus
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    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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