Observation of the anomalous temperature dependence of resonance tunneling through zero-dimensional states in a quantum well with dynamic coulomb interaction between the tunneling channels

Magnetic tunneling through zero-dimensional states in a weakly silicon-doped GaAs quantum well of a resonance-tunneling diode, which lie deeper than the levels of isolated shallow donors, has been investigated. The anomalous temperature dependence of resonance tunneling through some of these states has been discovered, which cannot be explained within the traditional model of tunneling through independent channels. A model has been proposed which assumes the presence of dynamic Coulomb interaction of the main resonance-tunneling channel with a parallel inelastic one and provides a qualitative description of the anomalous dependence observed in the experiment. A weak magnetic field destroys the regime of the dynamic blockade of the tunneling channel.