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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2008, Volume 88, Issue 12, Pages 939–943
(Mi jetpl323)
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CONDENSED MATTER
Type of the second hole subband on the Si(110) surface: Spin splitting anisotropy
S. I. Dorozhkin Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432, Russia
Abstract:
Magnetoresistance measurements have been performed for the cases of one and two occupied size-quantization hole subbands in silicon field-effect transistors prepared on the Si (110) surface. In both cases, Shubnikov-de Haas oscillations exhibit very weak sensitivity to the in-plane component of the magnetic field. This indicates that both lowest subbands are formed by heavy holes. This conclusion disagrees with the wide-spread opinion that the second subband is the ground subband of light holes in the system under consideration.
Received: 11.11.2008
Citation:
S. I. Dorozhkin, “Type of the second hole subband on the Si(110) surface: Spin splitting anisotropy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 88:12 (2008), 939–943; JETP Letters, 88:12 (2008), 819–822
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https://www.mathnet.ru/eng/jetpl323 https://www.mathnet.ru/eng/jetpl/v88/i12/p939
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Abstract page: | 178 | Full-text PDF : | 83 | References: | 42 |
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