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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2008, Volume 88, Issue 12, Pages 934–938 (Mi jetpl322)  
This article is cited in 8 scientific papers (total in 8 papers)

CONDENSED MATTER

Spin relaxation in the impurity band of a semiconductor in the external magnetic field

I. S. Lyubinskiy

Ioffe Physical Technical Institute RAS, St. Petersburg, 194021, Russia
Full-text PDF (655 kB) Citations (8)
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Abstract: Spin relaxation in the impurity band of a 2D semiconductor with spin-split spectrum and hyperfine interaction in the external magnetic field is considered. Two contributions to the spin relaxation are shown to be relevant: the one given by optimal impurity configurations with the hop-waiting time inversely proportional to the external magnetic field and another one related to electron motion over large distances. The average spin relaxation rate is calculated.
Received: 10.11.2008
English version:
Journal of Experimental and Theoretical Physics Letters, 2008, Volume 88, Issue 12, Pages 814–818
DOI: https://doi.org/10.1134/S0021364008240089
Bibliographic databases:
Document Type: Article
PACS: 71.55.Jv, 71.70.Ej, 72.25.Rb, 85.75.-d
Language: English
Citation: I. S. Lyubinskiy, “Spin relaxation in the impurity band of a semiconductor in the external magnetic field”, Pis'ma v Zh. Èksper. Teoret. Fiz., 88:12 (2008), 934–938; JETP Letters, 88:12 (2008), 814–818
Citation in format AMSBIB
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\paper Spin relaxation in the impurity band of a~semiconductor in the external magnetic field
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\vol 88
\issue 12
\pages 934--938
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\issue 12
\pages 814--818
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  • https://www.mathnet.ru/eng/jetpl/v88/i12/p934
    • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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    References:43
     
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