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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2012, Volume 96, Issue 4, Pages 268–271
(Mi jetpl3210)
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This article is cited in 1 scientific paper (total in 1 paper)
CONDENSED MATTER
Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field
E. B. Olshanetskiia, Z. D. Kvonba, G. M. Gusevc, N. N. Mikhailova, S. A. Dvoretskiia a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
b Novosibirsk State University
c Universidade de São Paulo, Instituto de Física Teórica
Abstract:
A metal-insulator transition in a two-dimensional semimetal based on HgTe quantum wells is discovered. The transition is induced by a magnetic field applied parallel to the plane of the quantum well. The threshold behavior of the activation energy as a function of the magnetic-field strength and an abrupt reduction of the Hall resistance at the onset of the transition suggest that the observed effect originates from the formation of an excitonic insulator.
Received: 05.06.2012 Revised: 09.07.2012
Citation:
E. B. Olshanetskii, Z. D. Kvon, G. M. Gusev, N. N. Mikhailov, S. A. Dvoretskii, “Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:4 (2012), 268–271; JETP Letters, 96:4 (2012), 251–254
Linking options:
https://www.mathnet.ru/eng/jetpl3210 https://www.mathnet.ru/eng/jetpl/v96/i4/p268
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