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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2008, Volume 88, Issue 12, Pages 918–921 (Mi jetpl319)  

This article is cited in 38 scientific papers (total in 38 papers)

CONDENSED MATTER

Surface enhanced Raman scattering by CdS quantum dots

A. G. Milekhina, L. L. Sveshnikovaa, T. A. Dudaa, N. V. Surovtsevb, S. V. Adichtchevb, D. R. T. Zahnc

a Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk, 630090, Russia
b Institute of Automatics and Electrometry, Siberian Branch, Russian Academy of Sciences, Universitetskii pr. 1, Novosibirsk, 630090, Russia
c Institut für Physik, Technische Universität Chemnitz, D-09107 Chemnitz, Germany
References:
Abstract: Surface enhanced Raman scattering is studied in nanostructures with CdS quantum dots formed using the Langmuir-Blodgett technology. Features due to quantum dot longitudinal optical phonons are observed in the Raman spectra of both free CdS quantum dots and such dots distributed in an organic matrix. The surface enhanced Raman scattering by nanostructures with CdS quantum dots covered by an Ag cluster film is observed experimentally. Applying Ag clusters onto the nanostructure surfaces results in a sharp (40-fold) increase in the intensity of Raman scattering by optical phonons in the quantum dots. It is shown that the dependence of surface enhanced Raman scattering on the excitation energy is resonant with a maximum at the energy corresponding to the maximum absorption coefficient of Ag clusters.
Received: 30.07.2008
Revised: 11.09.2008
English version:
Journal of Experimental and Theoretical Physics Letters, 2008, Volume 88, Issue 12, Pages 799–801
DOI: https://doi.org/10.1134/S0021364008240053
Bibliographic databases:
Document Type: Article
PACS: 63.22.Kn, 78.30.Fs, 78.67.Hc
Language: Russian


Citation: A. G. Milekhin, L. L. Sveshnikova, T. A. Duda, N. V. Surovtsev, S. V. Adichtchev, D. R. T. Zahn, “Surface enhanced Raman scattering by CdS quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 88:12 (2008), 918–921; JETP Letters, 88:12 (2008), 799–801
Linking options:
  • https://www.mathnet.ru/eng/jetpl319
  • https://www.mathnet.ru/eng/jetpl/v88/i12/p918
  • This publication is cited in the following 38 articles:
    1. Narmada Basva, Kolla Lakshmi Ganapathi, M. S. Ramachandra Rao, J Mater Sci: Mater Electron, 35:21 (2024)  crossref
    2. Cheng Shen, Xue Wang, Yuxue Wei, Fang Chen, Zhenzhen Zhuo, Mengdie Cai, Mengmeng Li, Song Sun, Langmuir, 39:21 (2023), 7328  crossref
    3. Farzad Farahmandzadeh, Samira Salehi, Mehdi Molaei, Haniyeh Fallah, Vajihe Nejadshafiee, J Fluoresc, 33:4 (2023), 1515  crossref
    4. N. P. Kovalets, I. V. Razumovskaya, S. A. Bedin, A. V. Naumov, JETP Letters, 118:4 (2023), 249–254  mathnet  crossref  crossref
    5. K. R. Karimullin, A. I. Arzhanov, N. V. Surovtsev, A. V. Naumov, Opt. Spectrosc., 131:10 (2023), 995  crossref
    6. Gulistan Y. Shaikh, Dhanaraj S. Nilegave, Swapnil S. Girawale, Kiran B. Kore, Shivkumar R Newaskar, Shrishreshtha A. Sahu, Adinath M. Funde, ACS Omega, 7:34 (2022), 30233  crossref
    7. Seyyed Mojtaba Mousavi, Seyyed Alireza Hashemi, Masoomeh Yari Kalashgrani, Darwin Kurniawan, Ahmad Gholami, Vahid Rahmanian, Navid Omidifar, Wei-Hung Chiang, Biosensors, 12:7 (2022), 461  crossref
    8. R. Kh. Gainutdinov, L. Ya. Nabieva, A. I. Garifullin, A. Shirdelkhavar, A. A. Mutygullina, M. Kh. Salakhov, JETP Letters, 114:4 (2021), 188–194  mathnet  crossref  crossref  isi
    9. Chen H.-Ch., Shabir A., Tan Ch.M., Singh P., Lin J.-H., Sci Rep, 11:1 (2021), 24153  crossref  isi  scopus
    10. Kolaei M., Tayebi M., Masoumi Z., Tayyebi A., Lee B.-K., Environ. Sci.-Nano, 2021  crossref  isi  scopus
    11. Milekhin A.G., Duda T.A., Rodyakina E.E., Anikin V K., Kuznetsov S.A., Milekhin I.A., Zahn D.R.T., Latyshev V A., Optoelectron. Instrum. Data Proc., 56:5 (2020), 503–509  crossref  isi  scopus
    12. Sundaram S.K., Subramanian S., Panneerselvam V., Salammal Sh.T., Appl. Phys. A-Mater. Sci. Process., 125:5 (2019), 356  crossref  isi  scopus
    13. Pham Nam Thang, Le Xuan Hung, Dao Nguyen Thuan, Nguyen Thu Loan, Binard G., de Marcillac W.D., Maitre A., Nguyen Quang Liem, Coolen L., Pham Thu Nga, Appl. Phys. A-Mater. Sci. Process., 125:5 (2019), 337  crossref  isi  scopus
    14. Hamoudi W.K., Ismail R.A., Abbas H.F., Opt. Quantum Electron., 51:4 (2019), 126  crossref  isi  scopus
    15. Kondratenko T.S., Smirnov M.S., Ovchinnikov O.V., Shabunya-Klyachkovskaya E.V., Matsukovich A.S., Zvyagin A.I., Vinokur Y.A., Semiconductors, 52:9 (2018), 1137–1144  crossref  isi  scopus
    16. Dzhagan V.M., Azhniuk Yu.M., Milekhin A.G., Zahn D.R.T., J. Phys. D-Appl. Phys., 51:50 (2018), 503001  crossref  isi  scopus
    17. Laurencikova A., Elias P., Hasenohrl S., Kovac Jr. J., Szobolovszky R., Novak J., Appl. Surf. Sci., 461:SI (2018), 149–153  crossref  isi  scopus
    18. Milekhin A.G., Kuznetsov S.A., Sveshnikova L.L., Duda T.A., Milekhin I.A., Rodyakina E.E., Latyshev A.V., Dzhagan V.M., Zahn D.R.T., J. Phys. Chem. C, 121:10 (2017), 5779–5786  crossref  isi  scopus
    19. Milekhin A.G. Zahn D.R.T., Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications, ed. Latyshev A. Dvurechenskii A. Aseev A., Elsevier Science BV, 2017, 157–186  crossref  isi  scopus
    20. Milekhin A.G., Sveshnikova L.L., Duda T.A., Yeryukov N.A., Rodyakina E.E., Gutakovskii A.K., Batsanov S.A., Latyshev A.V., Zahn D.R.T., Physica E, 75 (2016), 210–222  crossref  adsnasa  isi  elib  scopus
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