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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2012, Volume 96, Issue 2, Pages 107–109
(Mi jetpl3180)
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This article is cited in 7 scientific papers (total in 7 papers)
CONDENSED MATTER
Magnetic effects in the oxidation of silicon
O. V. Koplaka, R. B. Morgunovb, A. L. Buchachenkob a National Taras Shevchenko University of Kyiv
b Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
Abstract:
The mass spectrometry study has indicated that the magnetic field accelerates the oxidation of the surface of silicon crystals. The oxidation rate also depends on the nuclear spin of silicon: the oxidation rate of atoms with magnetic nuclei ($^{29}$Si) is almost twice as high as that of atoms with spinless, unmagnetized nuclei ($^{28}$Si and $^{30}$Si). Both effects—magnetic field and magnetic isotope—reliably prove that the oxidation of silicon is a spin-selective reaction involving radicals and radical pairs as intermediate paramagnetic particles. A spin-selective magnetic sensitive oxidation mechanism is discussed.
Received: 30.05.2012 Revised: 13.06.2012
Citation:
O. V. Koplak, R. B. Morgunov, A. L. Buchachenko, “Magnetic effects in the oxidation of silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:2 (2012), 107–109; JETP Letters, 96:2 (2012), 102–104
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https://www.mathnet.ru/eng/jetpl3180 https://www.mathnet.ru/eng/jetpl/v96/i2/p107
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Abstract page: | 360 | Full-text PDF : | 102 | References: | 52 | First page: | 4 |
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