Self-formation of quantum wire networks in porous InGaAs/GaAs superlattices

The structures containing networks of one-dimensional quantum wires were obtained through self-formation in the course of electrochemical etching of multilayer heteroepitaxial structures with a two-dimensional charge-carrier gas in InGaAs layers. The fact that the dimensionality of the electron-hole subsystem is reduced and the charge-carrier energy spectrum transforms from two-dimensional to quasi-one-dimensional was demonstrated by the shift and narrowing of resonance lines in the photoluminescence spectrum.