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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2008, Volume 88, Issue 11, Pages 877–882
(Mi jetpl310)
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This article is cited in 3 scientific papers (total in 3 papers)
CONDENSED MATTER
Electronic transitions in the VBO3 single crystal at high pressures
A. G. Gavriliukab, N. V. Kazakc, S. G. Ovchinnikovcd, I. S. Lyubutina a Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, Russia
b Institute for High Pressure Physics, Russian Academy of Sciences, Troitsk, Moscow region, 142190, Russia
c Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russia
d Siberian Federal University, Krasnoyarsk, 660041, Russia
Abstract:
Optical absorption spectra of single crystals of the ferromagnetic semiconductor VBO3 are studied at high pressures up to 70 GPa achieved in a diamond-anvil cell. An electronic transition accompanied by sharp changes in the optical parameters and a decrease in the optical gap from E 0 = 3.02 eV to 2.25 eV is found at the pressure P C ~ 30 GPa. The gap does not disappear in the high-pressure phase and its value becomes typical of semiconductors. This is indicative of a semiconductor-semiconductor transition. The transition to the metallic state may occur at the critical pressure P met ≈ 290 GPa.
Received: 30.10.2008
Citation:
A. G. Gavriliuk, N. V. Kazak, S. G. Ovchinnikov, I. S. Lyubutin, “Electronic transitions in the VBO3 single crystal at high pressures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 88:11 (2008), 877–882; JETP Letters, 88:11 (2008), 762–766
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https://www.mathnet.ru/eng/jetpl310 https://www.mathnet.ru/eng/jetpl/v88/i11/p877
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Abstract page: | 272 | Full-text PDF : | 98 | References: | 38 |
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