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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2002, Volume 75, Issue 8, Pages 479–482
(Mi jetpl3089)
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This article is cited in 17 scientific papers (total in 17 papers)
CONDENSED MATTER
Raman spectra of MgB$\mathbf{_2}$ at high pressure and topological electronic transition
K. P. Meletova, M. P. Kulakova, N. N. Kolesnikova, J. Arvanitidisb, G. A. Kourouklisb a Institute of Solid State Physics, Russian Academy of Sciences
b Physics Division, School of Technology, Aristotle University of Thessaloniki
Abstract:
Raman spectra of the MgB$_2$ ceramic samples were measured as a function of pressure up to 32 GPa at room temperature. The spectrum at normal conditions contains a very broad peak at $\sim590 \,$cm$^{-1}$ related to the $E_{2g}$ phonon mode. The frequency of this mode exhibits a strong linear dependence in the pressure region from 5 to 18 GPa, whereas beyond this region the slope of the pressure-induced frequency shift is reduced by about a factor of two. The pressure dependence of the phonon mode up to $\sim5 \,$GPa exhibits a change in the slope as well as a «hysteresis» effect in the frequency vs. pressure behavior. These singularities in the $E_{2g}$ mode behavior under pressure support the suggestion that MgB$_2$ may undergo a pressure-induced topological electronic transition.
Received: 18.03.2002
Citation:
K. P. Meletov, M. P. Kulakov, N. N. Kolesnikov, J. Arvanitidis, G. A. Kourouklis, “Raman spectra of MgB$\mathbf{_2}$ at high pressure and topological electronic transition”, Pis'ma v Zh. Èksper. Teoret. Fiz., 75:8 (2002), 479–482; JETP Letters, 75:8 (2002), 406–409
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https://www.mathnet.ru/eng/jetpl3089 https://www.mathnet.ru/eng/jetpl/v75/i8/p479
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Abstract page: | 147 | Full-text PDF : | 60 | References: | 30 |
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