Abstract:
A microscopic model is developed for calculating electrostatic properties of nanotube devices. It is shown that the quantum-mechanical approach yields the same results as the statistical calculation in the limit of a thin tube suspended over a conducting gate at a distance exceeding the nanotube radius. A closed analytic expression is obtained for the atomistic capacitance of a straight nanotube and for a nanotube with a modest curvature. This method allows the fast and exact calculation of device parameters for the nanotube electromechanical systems and nanotube electronic devices.
Citation:
K. A. Bulashevich, V. V. Rotkin, “Nanotube devices: A microscopic model”, Pis'ma v Zh. Èksper. Teoret. Fiz., 75:4 (2002), 239–244; JETP Letters, 75:4 (2002), 205–209
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