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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2002, Volume 75, Issue 2, Pages 103–108
(Mi jetpl3031)
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This article is cited in 15 scientific papers (total in 15 papers)
CONDENSED MATTER
Coherent tunneling between elementary conducting layers in the NbSe$_3$ charge-density-wave conductor
Yu. I. Latysheva, A. A. Sinchenkobc, L. N. Bulaevskiid, V. N. Pavlenkoa, P. Monceauc a Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow
b Moscow Engineering Physics Institute (State University)
c Centre de Recherches sur les Très Basses Températures
d Los Alamos National Laboratory
Abstract:
Characteristic features of transverse transport along the $a^*$ axis in the NbSe$_3$ charge-density-wave conductor are studied. At low temperatures, the $I-V$ characteristics of both layered structures and NbSe$_3$-NbSe$_3$ point contacts exhibit a strong peak of dynamic conductivity at zero bias voltage. In addition, the $I-V$ characteristics of layered structures exhibit a series of peaks that occur at voltages equal to multiples of the double Peierls gap. The conductivity behavior observed in the experiment resembles that reported for the interlayer tunneling in Bi-2212 high-$T_c$ superconductors. The conductivity peak at zero bias is explained using the model of almost coherent interlayer tunneling of the charge carriers that are not condensed in the charge density wave.
Received: 05.11.2001 Revised: 17.12.2001
Citation:
Yu. I. Latyshev, A. A. Sinchenko, L. N. Bulaevskii, V. N. Pavlenko, P. Monceau, “Coherent tunneling between elementary conducting layers in the NbSe$_3$ charge-density-wave conductor”, Pis'ma v Zh. Èksper. Teoret. Fiz., 75:2 (2002), 103–108; JETP Letters, 75:2 (2002), 93–97
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https://www.mathnet.ru/eng/jetpl3031 https://www.mathnet.ru/eng/jetpl/v75/i2/p103
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Abstract page: | 171 | Full-text PDF : | 48 | References: | 19 |
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