|
Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2002, Volume 75, Issue 2, Pages 100–102
(Mi jetpl3030)
|
|
|
|
This article is cited in 1 scientific paper (total in 1 paper)
CONDENSED MATTER
Spontaneous formation of a system of highly ordered germanium nanoislands upon epitaxial deposition on profiled (111) silicon substrates under electromigration conditions
I. V. Zakurdaeva, S. Yu. Sadof'eva, A. O. Pogosovb a Ryazan State Radiotechnical Academy
b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
Abstract:
Atomic-force microscopy was used to study the surface topography of SiGe structures grown by epitaxial deposition of Ge on profiled Si(111) substrates under electromigration conditions. Systems of highly ordered germanium nanosized islands with dimensions of 10-20 nm and a density of $6\times10^{10}\,$cm$^{-2}$ were obtained. It is shown that the geometrical parameters of self-organizing nanoislands can be controlled by a proper choice of the growth and postgrowth annealing conditions for these structures.
Received: 11.12.2001
Citation:
I. V. Zakurdaev, S. Yu. Sadof'ev, A. O. Pogosov, “Spontaneous formation of a system of highly ordered germanium nanoislands upon epitaxial deposition on profiled (111) silicon substrates under electromigration conditions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 75:2 (2002), 100–102; JETP Letters, 75:2 (2002), 91–92
Linking options:
https://www.mathnet.ru/eng/jetpl3030 https://www.mathnet.ru/eng/jetpl/v75/i2/p100
|
Statistics & downloads: |
Abstract page: | 157 | Full-text PDF : | 53 | References: | 33 |
|