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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2002, Volume 75, Issue 2, Pages 92–95
(Mi jetpl3028)
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CONDENSED MATTER
High intensity of interband transitions in double-barrier structures with a high-frequency electric field
E. I. Golant, A. B. Pashkovskii State Scientific-Production Enterprise "Istok", Fryazino, Moskovskaya obl.
Abstract:
A solution of a two-band analogue of the time-dependent Schrödinger equation describing resonance coherent electron interaction with a high-frequency field was found for a symmetric double-barrier structure, and an analytic expression was obtained for the small-signal conductivity proportional to the electron transition intensity. It was found that the high-frequency conductivity of double-barrier structures in the case of interband transitions could be significantly higher than in the case of intersubband transitions.
Received: 07.12.2001
Citation:
E. I. Golant, A. B. Pashkovskii, “High intensity of interband transitions in double-barrier structures with a high-frequency electric field”, Pis'ma v Zh. Èksper. Teoret. Fiz., 75:2 (2002), 92–95; JETP Letters, 75:2 (2002), 83–86
Linking options:
https://www.mathnet.ru/eng/jetpl3028 https://www.mathnet.ru/eng/jetpl/v75/i2/p92
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Abstract page: | 170 | Full-text PDF : | 64 | References: | 36 |
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