V. A. Tkachenko, Z. D. Kvon, O. A. Tkachenko, D. G. Baksheev, O. Estibals, J. C. Portal, “Coulomb blockade in a lateral triangular small quantum dot”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:12 (2002), 850–854; JETP Letters, 76:12 (2002), 720

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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2002, Volume 76, Issue 12, Pages 850–854 (Mi jetpl3005)

This article is cited in 7 scientific papers (total in 7 papers)

CONDENSED MATTER

Coulomb blockade in a lateral triangular small quantum dot

V. A. Tkachenko^a, Z. D. Kvon^a, O. A. Tkachenko^a, D. G. Baksheev^a, O. Estibals^b, J. C. Portal^a

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Grenoble High Magnetic Fields Laboratory

Full-text PDF (487 kB) Citations (7)

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Abstract: An AlGaAs/GaAs lateral quantum dot of triangular shape with a characteristic size

$L<100\,$ nm (the smallest size for dots of this type) containing less than ten electrons was studied theoretically and experimentally. Single-electron oscillations of the conductance

$G$ of this dot were measured at

$G<e^2/h$ . When going from

$G\ll e^2/h$ to

$G\approx0.5\,e^2/h$ , a decrease was found not only in the amplitude but also in the period of oscillations. A calculation of the electrostatics demonstrated that this effect is due to a change in the dot size produced by control voltages.

Received: 27.11.2002

English version:
Journal of Experimental and Theoretical Physics Letters, 2002, Volume 76, Issue 12, Pages 720–723
DOI: https://doi.org/10.1134/1.1556213

Bibliographic databases:

Document Type: Article

PACS: 73.23.Ad, 73.50.-h

Language: Russian

Citation: V. A. Tkachenko, Z. D. Kvon, O. A. Tkachenko, D. G. Baksheev, O. Estibals, J. C. Portal, “Coulomb blockade in a lateral triangular small quantum dot”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:12 (2002), 850–854; JETP Letters, 76:12 (2002), 720–723

Citation in format AMSBIB

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\paper Coulomb blockade in a lateral triangular small quantum dot

\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.

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\issue 12

\pages 850--854

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\vol 76

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Linking options:

https://www.mathnet.ru/eng/jetpl3005

https://www.mathnet.ru/eng/jetpl/v76/i12/p850

This publication is cited in the following 7 articles:

Tkachenko O.A. Tkachenko V.A. Kvon Z.D. Sheglov D.V. Aseev A.L., Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications, ed. Latyshev A. Dvurechenskii A. Aseev A., Elsevier Science BV, 2017, 131–155
Tkachenko V.A. Tkachenko O.A. Kvon Z.D. Latyshev A.V. Aseev A.L., Optoelectron. Instrum. Data Proc., 52:5 (2016), 518–528
O A Tkachenko, V A Tkachenko, Z D Kvon, A L Aseev, J-C Portal, Nanotechnology, 23:9 (2012), 095202
JETP Letters, 90:8 (2009), 582–586
V. A. Tkachenko, O. A. Tkachenko, Z. D. Kvon, D. G. Baksheev, A. L. Aseev, J. C. Portal, JETP Letters, 80:9 (2004), 588–592
O. A. Tkachenko, V. A. Tkachenko, D. G. Baksheev, JETP Letters, 79:6 (2004), 293–297
D. G. BAKSHEYEV, A. A. BYKOV, V. A. TKACHENKO, O. A. TKACHENKO, L. V. LITVIN, A. V. LATYSHEV, A. L. ASEEV, O. ESTIBALS, J.-C. PORTAL, Int. J. Nanosci., 02:06 (2003), 495

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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