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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2002, Volume 76, Issue 9, Pages 673–677
(Mi jetpl2974)
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This article is cited in 12 scientific papers (total in 12 papers)
CONDENSED MATTER
Effect of screening by two-dimensional charge carriers on the binding energy of excitonic states in GaAs/AlGaAs quantum wells
S. I. Gubarev, O. V. Volkov, V. A. Koval'skii, D. V. Kulakovskii, I. V. Kukushkin Institute of Solid State Physics, Russian Academy of Sciences
Abstract:
The spectrum of excitonic excited states in GaAs/AlGaAs quantum wells of different width is studied together with its change due to the screening of electron-hole interaction by two-dimensional electrons. The exciton binding energy decreases sharply with an increase in the concentration of two-dimensional electrons. The temperature dependence of screening parameters is studied for the ground and excited excitonic states down to ultralow temperatures $T=50$ mK.
Received: 14.10.2002
Citation:
S. I. Gubarev, O. V. Volkov, V. A. Koval'skii, D. V. Kulakovskii, I. V. Kukushkin, “Effect of screening by two-dimensional charge carriers on the binding energy of excitonic states in GaAs/AlGaAs quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:9 (2002), 673–677; JETP Letters, 76:9 (2002), 575–578
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https://www.mathnet.ru/eng/jetpl2974 https://www.mathnet.ru/eng/jetpl/v76/i9/p673
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Abstract page: | 146 | Full-text PDF : | 69 | References: | 26 |
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