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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2002, Volume 76, Issue 9, Pages 665–668
(Mi jetpl2972)
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CONDENSED MATTER
Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide
S. V. Vyshenskiia, U. Zeitlerb, R. J. Haugb a Nuclear Physics Institute, Moscow State University
b Institut für Festkörperphysik, Universität Hannover
Abstract:
Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide with two metallic terminals, we derive simple conditions for a step-like voltage-current curve. Due to standard chemical properties, doping phosphorus atoms located in a certain domain of the dot form geometrically parallel current channels. The height of the current step typically equals to (1.2 pA)$N$, where $N=0,1,2,3\ldots$ is the number of doping atoms inside the domain, and only negligibly depends on the actual position of the dopants. The found conditions are feasible in experimentally available structures.
Received: 03.10.2002
Citation:
S. V. Vyshenskii, U. Zeitler, R. J. Haug, “Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:9 (2002), 665–668; JETP Letters, 76:9 (2002), 568–571
Linking options:
https://www.mathnet.ru/eng/jetpl2972 https://www.mathnet.ru/eng/jetpl/v76/i9/p665
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Abstract page: | 159 | Full-text PDF : | 44 | References: | 35 |
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