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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2002, Volume 76, Issue 9, Pages 660–664
(Mi jetpl2971)
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This article is cited in 8 scientific papers (total in 8 papers)
CONDENSED MATTER
Multicomponent dense electron gas as a model of Si MOSFET
S. V. Iordanskii, A. B. Kashuba L. D. Landau Institute for Theoretical Physics, Russian Academy of Sciences
Abstract:
We solve a 2D model of $N$-component dense electron gas in the limit $N\to \infty$ and in a range of the Coulomb interaction parameter: $N^{-3/2}\ll r_s\ll 1$. The quasiparticle interaction on the Fermi circle vanishes as $\hbar^2/Nm$. The ground state energy and the effective mass are found as series in powers of $r_s^{2/3}$. In the quantum Hall state on the lowest Landau level at integer filling: $1\ll\nu<N$, the charge activation energy gap and the exchange constant are: $\Delta=\log(r_s N^{3/2})\hbar\omega_H/\nu$ and $J=0.66 \hbar\omega_H/\nu$.
Received: 02.10.2002
Citation:
S. V. Iordanskii, A. B. Kashuba, “Multicomponent dense electron gas as a model of Si MOSFET”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:9 (2002), 660–664; JETP Letters, 76:9 (2002), 563–567
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https://www.mathnet.ru/eng/jetpl2971 https://www.mathnet.ru/eng/jetpl/v76/i9/p660
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Abstract page: | 137 | Full-text PDF : | 75 | References: | 45 |
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