Abstract:
The trial wave function method developed in [10, 11] for the case of a narrow s band in a perfect crystal is adapted for the calculation of the concentration dependence of the effective mass and the Landé factor in a two-dimensional electron system of low density. It has been found that the effective mass has a tendency to divergence at a certain critical concentration, whereas the g factor remains finite.
Citation:
V. T. Dolgopolov, “On effective electron mass of silicon field structures at low electron densities”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:6 (2002), 437–439; JETP Letters, 76:6 (2002), 377–379