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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2002, Volume 76, Issue 6, Pages 437–439 (Mi jetpl2932)  
This article is cited in 27 scientific papers (total in 27 papers)

CONDENSED MATTER

On effective electron mass of silicon field structures at low electron densities

V. T. Dolgopolov

Institute of Solid State Physics, Russian Academy of Sciences
Full-text PDF (158 kB) Citations (27)
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Abstract: The trial wave function method developed in [10, 11] for the case of a narrow $s$ band in a perfect crystal is adapted for the calculation of the concentration dependence of the effective mass and the Landé factor in a two-dimensional electron system of low density. It has been found that the effective mass has a tendency to divergence at a certain critical concentration, whereas the $g$ factor remains finite.
Received: 22.08.2002
English version:
Journal of Experimental and Theoretical Physics Letters, 2002, Volume 76, Issue 6, Pages 377–379
DOI: https://doi.org/10.1134/1.1525041
Bibliographic databases:
Document Type: Article
PACS: 71.30.+h, 73.40. Qv
Language: Russian
Citation: V. T. Dolgopolov, “On effective electron mass of silicon field structures at low electron densities”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:6 (2002), 437–439; JETP Letters, 76:6 (2002), 377–379
Citation in format AMSBIB
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\by V.~T.~Dolgopolov
\paper On effective electron mass of silicon field structures at low electron densities
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2002
\vol 76
\issue 6
\pages 437--439
\mathnet{http://mi.mathnet.ru/jetpl2932}
\transl
\jour JETP Letters
\yr 2002
\vol 76
\issue 6
\pages 377--379
\crossref{https://doi.org/10.1134/1.1525041}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-0038891600}
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    • This publication is cited in the following 27 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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