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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2003, Volume 77, Issue 12, Pages 794–797
(Mi jetpl2843)
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This article is cited in 6 scientific papers (total in 6 papers)
Commensurate oscillations of the magnetoresistance of a two-dimensional electron gas in GaAs quantum wells with corrugated heteroboundaries
A. K. Bakarov, A. A. Bykov, N. D. Aksenova, D. V. Shcheglov, A. V. Latyshev, A. I. Toropov Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
Oscillations of the magnetoresistance commensurate with the spatial modulation period of the growth surfaces were observed in selectively doped GaAs quantum wells with AlAs/GaAs superlattice barriers grown by molecular beam epitaxy. The experimental data obtained are explained by the lateral potential modulation of the two-dimensional electron gas in narrow GaAs quantum wells with corrugated heteroboundaries and agree with the two-dimensional distribution of the local capacitance in such structures.
Received: 26.03.2003 Revised: 05.05.2003
Citation:
A. K. Bakarov, A. A. Bykov, N. D. Aksenova, D. V. Shcheglov, A. V. Latyshev, A. I. Toropov, “Commensurate oscillations of the magnetoresistance of a two-dimensional electron gas in GaAs quantum wells with corrugated heteroboundaries”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:12 (2003), 794–797; JETP Letters, 77:12 (2003), 662–665
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https://www.mathnet.ru/eng/jetpl2843 https://www.mathnet.ru/eng/jetpl/v77/i12/p794
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Abstract page: | 163 | Full-text PDF : | 48 | References: | 29 |
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