Abstract:
Exciton luminescence in AlGaAs layers is studied under interband excitation by circularly polarized light. Curves of luminescence depolarization in a transverse magnetic field (Hanle effect) exhibit peaks arranged symmetrically about a point H=0. It is shown that this effect is attributable to crossings of fine-structure levels in the magnetic field. The exchange splitting of bulk exciton levels and also recombination and spin-relaxation times are determined from a comparison between theoretical and experimental dependences.
Citation:
A. V. Efanov, K. S. Zhuravlev, T. S. Shamirzaev, W. Kellner, H. Pasher, “Observation of exchange interaction effects under optical orientation of excitons in AlGaAs”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:10 (2003), 664–667; JETP Letters, 77:10 (2003), 561–564