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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2003, Volume 77, Issue 10, Pages 664–667
(Mi jetpl2821)
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This article is cited in 1 scientific paper (total in 1 paper)
Observation of exchange interaction effects under optical orientation of excitons in AlGaAs
A. V. Efanova, K. S. Zhuravleva, T. S. Shamirzaeva, W. Kellnerb, H. Pasherb a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Physikalisches Institut, Universität Bayreuth
Abstract:
Exciton luminescence in AlGaAs layers is studied under interband excitation by circularly polarized light. Curves of luminescence depolarization in a transverse magnetic field (Hanle effect) exhibit peaks arranged symmetrically about a point $H=0$. It is shown that this effect is attributable to crossings of fine-structure levels in the magnetic field. The exchange splitting of bulk exciton levels and also recombination and spin-relaxation times are determined from a comparison between theoretical and experimental dependences.
Received: 27.03.2003
Citation:
A. V. Efanov, K. S. Zhuravlev, T. S. Shamirzaev, W. Kellner, H. Pasher, “Observation of exchange interaction effects under optical orientation of excitons in AlGaAs”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:10 (2003), 664–667; JETP Letters, 77:10 (2003), 561–564
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https://www.mathnet.ru/eng/jetpl2821 https://www.mathnet.ru/eng/jetpl/v77/i10/p664
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Abstract page: | 141 | Full-text PDF : | 53 | References: | 49 |
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