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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2003, Volume 77, Issue 7, Pages 430–433
(Mi jetpl2778)
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This article is cited in 9 scientific papers (total in 9 papers)
Subthreshold sputtering at high temperatures
M. I. Guseva, V. M. Gureev, B. N. Kolbasov, S. N. Korshunov, Yu. V. Martynenko, V. B. Petrov, B. I. Khripunov Russian Research Centre "Kurchatov Institute", Moscow
Abstract:
The sputtering of tungsten from a target at a temperature of 1470 K during irradiation by 5 eV deuterium ions in a steady-state dense plasma is discovered. The literature values of the threshold for the sputtering of tungsten by deuterium ions are 160-200 eV. The tungsten sputtering coefficient measured by the loss of weight is found to be $1.5\times10^{-4}\,$atom/ion at a deuterium ion energy of 5 eV. Previously, such a sputtering coefficient was usually observed at energies of 250 eV. The sputtering is accompanied by a change in the target surface relief, i.e., by the etching of the grain boundaries and the formation of a wavy structure on the tungsten surface. The subthreshold sputtering at a high temperature is explained by the possible sputtering of adsorbed tungsten atoms that are released from the traps around the interstitial atoms and come to the target surface from the space between the grains. The wavy structure on the surface results from the merging of adsorbed atoms into ordered clusters.
Received: 25.02.2003
Citation:
M. I. Guseva, V. M. Gureev, B. N. Kolbasov, S. N. Korshunov, Yu. V. Martynenko, V. B. Petrov, B. I. Khripunov, “Subthreshold sputtering at high temperatures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:7 (2003), 430–433; JETP Letters, 77:7 (2003), 362–365
Linking options:
https://www.mathnet.ru/eng/jetpl2778 https://www.mathnet.ru/eng/jetpl/v77/i7/p430
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