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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2003, Volume 77, Issue 4, Pages 197–201
(Mi jetpl2737)
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This article is cited in 9 scientific papers (total in 9 papers)
CONDENSED MATTER
Refraction of thermalized electrons emitted ballistically into vacuum from $p^+$-GaAs-(Cs,O)
V. V. Bakina, A. A. Pakhnevicha, S. N. Kosolobovb, G. È. Shaiblerb, A. S. Yaroshevichb, A. S. Terekhovab a Novosibirsk State University
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
The refraction of thermalized photoelectrons emitted into vacuum from $p^+$-GaAs-(Cs,O) with a negative electron affinity was observed. The refraction is caused by a jump in electron effective mass at the semiconductor-vacuum interface. It was observed only for a small group of electrons that were emitted ballistically into vacuum without scattering of the tangential momentum component at the interface.
Received: 21.01.2003
Citation:
V. V. Bakin, A. A. Pakhnevich, S. N. Kosolobov, G. È. Shaibler, A. S. Yaroshevich, A. S. Terekhov, “Refraction of thermalized electrons emitted ballistically into vacuum from $p^+$-GaAs-(Cs,O)”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:4 (2003), 197–201; JETP Letters, 77:4 (2003), 167–171
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https://www.mathnet.ru/eng/jetpl2737 https://www.mathnet.ru/eng/jetpl/v77/i4/p197
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Abstract page: | 160 | Full-text PDF : | 64 | References: | 39 |
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