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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2003, Volume 77, Issue 3, Pages 162–166
(Mi jetpl2729)
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This article is cited in 18 scientific papers (total in 18 papers)
CONDENSED MATTER
Unconventional magnetoresistance in long InSb nanowires
S. V. Zaitsev-Zotova, Yu. A. Kumzerovb, Yu. A. Firsovb, P. Monceauc a Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow
b Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
c Centre de Recherches sur les Très Basses Températures
Abstract:
Magnetoresistance in long correlated nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter of around 5 nm, length 0.1–1 mm) is studied over temperature range 2.3–300 K. At zero magnetic field the electric conduction $G$ and the current-voltage characteristics of such wires obey the power laws $G\propto T^\alpha, I\propto V^\beta$, expected for one-dimensional electron systems. The effect of magnetic field corresponds to a 20% growth of the exponents $\alpha$, $\beta$ at $H=10$ T. The observed magnetoresistance is caused by the magnetic-field-induced breaking of the spin-charge separation and represents a novel mechanism of magnetoresistance.
Received: 25.12.2002
Citation:
S. V. Zaitsev-Zotov, Yu. A. Kumzerov, Yu. A. Firsov, P. Monceau, “Unconventional magnetoresistance in long InSb nanowires”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:3 (2003), 162–166; JETP Letters, 77:3 (2003), 135–139
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https://www.mathnet.ru/eng/jetpl2729 https://www.mathnet.ru/eng/jetpl/v77/i3/p162
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Abstract page: | 136 | Full-text PDF : | 44 | References: | 38 |
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