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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2003, Volume 77, Issue 1, Pages 38–42
(Mi jetpl2705)
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This article is cited in 9 scientific papers (total in 9 papers)
CONDENSED MATTER
New Wannier-Stark localization effects in natural 6H-SiC superlattice
V. I. Sankin, P. P. Shkrebii, N. S. Savkina, N. A. Kuznetsov Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
Abstract:
A premature electric breakdown caused by the formation of a strong-field domain under conditions of negative differential conductivity in the 6H-SiC $n^+$-$n^-$-$n^+$ structure optimized for ultrahigh-frequency measurements was observed in the range of electric fields corresponding to the Bloch oscillation regime in a natural 6H-SiC superlattice. The experimental results and ensuing estimates indicate that this domain is mobile and, hence, oscillating, allowing the microwave oscillations that are rapidly damped under conditions of avalanche break-down in a natural 6H-SiC superlattice to be forecasted. Crystal perfectness of a natural 6H-SiC superlattice made it possible to directly observe the Wannier-Stark localization up to electric breakdown, i.e., during the natural crystal lifetime. This was accomplished by the optical photoelectric transformation method in the multiplication regime for a photocurrent created by photons with above-bandgap energy. It was shown that the Wannier-Stark localization, which involves only electrons, occurs in natural 6H-SiC superlattice up to fields that are almost equal to the breakdown field in 6H-SiC, unresponsively to band mixing, i.e., to the fundamental destroyer of the Wannier-Stark localization.
Received: 29.11.2002
Citation:
V. I. Sankin, P. P. Shkrebii, N. S. Savkina, N. A. Kuznetsov, “New Wannier-Stark localization effects in natural 6H-SiC superlattice”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:1 (2003), 38–42; JETP Letters, 77:1 (2003), 34–38
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Abstract page: | 135 | Full-text PDF : | 50 | References: | 37 |
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