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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2003, Volume 78, Issue 5, Pages 757–762
(Mi jetpl2599)
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This article is cited in 3 scientific papers (total in 3 papers)
On the possibility of the direct study of local electron-phonon interaction in semiconductors
V. Gavryushin Institute of Materials Science and Applied Research and Department of Semiconductor Physics, Vilnius University
Abstract:
Local electron-phonon interaction in deep-level states of defects in semiconductors was studied by induced absorption spectroscopy. Using ZnS:Cu single crystals as an example, it was shown that the laser modulation of two-step impurity absorption is an efficient technique for direct investigations of phonon relaxation effects in deep-level states. It was shown that the localized states in ZnS are prone to extremely strong electron-phonon coupling.
Received: 30.06.2003 Revised: 24.07.2003
Citation:
V. Gavryushin, “On the possibility of the direct study of local electron-phonon interaction in semiconductors”, Pis'ma v Zh. Èksper. Teoret. Fiz., 78:5 (2003), 757–762; JETP Letters, 78:5 (2003), 309–313
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https://www.mathnet.ru/eng/jetpl2599 https://www.mathnet.ru/eng/jetpl/v78/i5/p757
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Abstract page: | 155 | Full-text PDF : | 75 | References: | 46 |
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