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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2008, Volume 88, Issue 8, Pages 587–591
(Mi jetpl256)
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This article is cited in 6 scientific papers (total in 6 papers)
CONDENSED MATTER
Formation of metastable above-barrier hole states in ZnSe/BeTe type II heterostructures under high-density optical excitation
A. A. Maksimova, S. V. Zaitseva, E. V. Filatova, A. V. Larionova, I. I. Tartakovskiia, D. R. Yakovlevbc, A. Waagd a Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432, Russia
b Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia
c Experimentelle Physik II, University of Dortmund, D-44227 Dortmund, Germany
d Institute of Semiconductor Technology, Braunschweig
Technical University, D-38106 Braunschweig, Germany
Abstract:
A considerable slowing down of the luminescence kinetics of the direct optical transitions has been discovered in ZnSe/BeTe type II heterostructures under high-density optical pumping by femtosecond laser pulses. The effect is attributed to the potential barrier that appears due to the strong band bending at a high density of spatially separated photoexcited carriers and forms a metastable above-barrier hole state in the ZnSe layer. This yields a longer energy relaxation time of the holes migrating to the adjacent BeTe layer. The experimental results agree well with the numerical calculations.
Received: 01.08.2008
Citation:
A. A. Maksimov, S. V. Zaitsev, E. V. Filatov, A. V. Larionov, I. I. Tartakovskii, D. R. Yakovlev, A. Waag, “Formation of metastable above-barrier hole states in ZnSe/BeTe type II heterostructures under high-density optical excitation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 88:8 (2008), 587–591; JETP Letters, 88:8 (2008), 511–514
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https://www.mathnet.ru/eng/jetpl256 https://www.mathnet.ru/eng/jetpl/v88/i8/p587
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