Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pis'ma v Zh. Èksper. Teoret. Fiz.:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2012, Volume 95, Issue 9, Pages 544–549 (Mi jetpl2551)  
This article is cited in 4 scientific papers (total in 4 papers)

CONDENSED MATTER

Accumulation of the excess of one type of charge carriers and the formation of trions in GaAs/AlGaAs shallow quantum wells

M. V. Kochiev, V. A. Tsvetkov, N. N. Sibel'din

P. N. Lebedev Physical Institute, Russian Academy of Sciences
Full-text PDF (362 kB) Citations (4)
References:
PDF
HTML
Abstract: The dynamics of excitons and trions in GaAs/AlGaAs heterostructures with shallow quantum wells is studied in time-resolved photoluminescence experiments carried out with different repetition rates of picosecond pump pulses for the cases of intrawell, above-barrier, and “two-color” excitation. It is established that excess charge carriers of one type accumulated in the quantum wells under above-barrier excitation play a key role in the formation and dynamics of the exciton-trion system and determine its composition and kinetic properties. The lifetime of excess charge carriers in the quantum wells, estimated from the experimental data, exceeds $10\mu$s.
Received: 11.04.2012
English version:
Journal of Experimental and Theoretical Physics Letters, 2012, Volume 95, Issue 9, Pages 481–485
DOI: https://doi.org/10.1134/S0021364012090056
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. V. Kochiev, V. A. Tsvetkov, N. N. Sibel'din, “Accumulation of the excess of one type of charge carriers and the formation of trions in GaAs/AlGaAs shallow quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:9 (2012), 544–549; JETP Letters, 95:9 (2012), 481–485
Citation in format AMSBIB
\Bibitem{KocTsvSib12}
\by M.~V.~Kochiev, V.~A.~Tsvetkov, N.~N.~Sibel'din
\paper Accumulation of the excess of one type of charge carriers and the formation of trions in GaAs/AlGaAs shallow quantum wells
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2012
\vol 95
\issue 9
\pages 544--549
\mathnet{http://mi.mathnet.ru/jetpl2551}
\elib{https://elibrary.ru/item.asp?id=17797375}
\transl
\jour JETP Letters
\yr 2012
\vol 95
\issue 9
\pages 481--485
\crossref{https://doi.org/10.1134/S0021364012090056}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000306427100010}
\elib{https://elibrary.ru/item.asp?id=20477745}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-84864089704}
Linking options:
  • https://www.mathnet.ru/eng/jetpl2551
  • https://www.mathnet.ru/eng/jetpl/v95/i9/p544
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
    Statistics & downloads:
    Abstract page:199
    Full-text PDF :82
    References:48
    First page:13
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024