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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2012, Volume 95, Issue 9, Pages 544–549
(Mi jetpl2551)
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This article is cited in 4 scientific papers (total in 4 papers)
CONDENSED MATTER
Accumulation of the excess of one type of charge carriers and the formation of trions in GaAs/AlGaAs shallow quantum wells
M. V. Kochiev, V. A. Tsvetkov, N. N. Sibel'din P. N. Lebedev Physical Institute, Russian Academy of Sciences
Abstract:
The dynamics of excitons and trions in GaAs/AlGaAs heterostructures with shallow quantum wells is studied in time-resolved photoluminescence experiments carried out with different repetition rates of picosecond pump pulses for the cases of intrawell, above-barrier, and “two-color” excitation. It is established that excess charge carriers of one type accumulated in the quantum wells under above-barrier excitation play a key role in the formation and dynamics of the exciton-trion system and determine its composition and kinetic properties. The lifetime of excess charge carriers in the quantum wells, estimated from the experimental data, exceeds $10\mu$s.
Received: 11.04.2012
Citation:
M. V. Kochiev, V. A. Tsvetkov, N. N. Sibel'din, “Accumulation of the excess of one type of charge carriers and the formation of trions in GaAs/AlGaAs shallow quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:9 (2012), 544–549; JETP Letters, 95:9 (2012), 481–485
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https://www.mathnet.ru/eng/jetpl2551 https://www.mathnet.ru/eng/jetpl/v95/i9/p544
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Abstract page: | 185 | Full-text PDF : | 74 | References: | 41 | First page: | 13 |
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