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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2012, Volume 95, Issue 8, Pages 462–466 (Mi jetpl2537)  

This article is cited in 3 scientific papers (total in 3 papers)

CONDENSED MATTER

Negative magnetoresistance in the regime of hopping conduction through $p$ states at quantum dots

A. V. Shumilin

Ioffe Physico-Technical Institute, Russian Academy of Sciences
Full-text PDF (172 kB) Citations (3)
References:
Abstract: The magnetoresistance in the system of quantum dots with hopping conduction and filling factor $2 < \nu < 3$ in the limit of small quantum dots has been considered. In this case, hopping conduction is determined by $p$ states. It has been shown that the system exhibits negative magnetoresistance associated with a change in the wavefunctions of $p$ states in a magnetic field. This mechanism of magnetoresistance is linear in magnetic field in a certain range of fields and can compete with the known interference mechanism of magnetoresistance. The magnitude of this magnetoresistance is independent of the temperature at fairly low temperatures and increases with a decrease in the size of a quantum dot.
Received: 25.11.2011
Revised: 14.03.2012
English version:
Journal of Experimental and Theoretical Physics Letters, 2012, Volume 95, Issue 8, Pages 416–419
DOI: https://doi.org/10.1134/S0021364012080115
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Shumilin, “Negative magnetoresistance in the regime of hopping conduction through $p$ states at quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:8 (2012), 462–466; JETP Letters, 95:8 (2012), 416–419
Citation in format AMSBIB
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  • https://www.mathnet.ru/eng/jetpl/v95/i8/p462
  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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