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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2012, Volume 95, Issue 8, Pages 462–466
(Mi jetpl2537)
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This article is cited in 3 scientific papers (total in 3 papers)
CONDENSED MATTER
Negative magnetoresistance in the regime of hopping conduction through $p$ states at quantum dots
A. V. Shumilin Ioffe Physico-Technical Institute, Russian Academy of Sciences
Abstract:
The magnetoresistance in the system of quantum dots with hopping conduction and filling factor $2 < \nu < 3$ in the limit of small quantum dots has been considered. In this case, hopping conduction is determined by $p$ states. It has been shown that the system exhibits negative magnetoresistance associated with a change in the wavefunctions of $p$ states in a magnetic field. This mechanism of magnetoresistance is linear in magnetic field in a certain range of fields and can compete with the known interference mechanism of magnetoresistance. The magnitude of this magnetoresistance is independent of the temperature at fairly low temperatures and increases with a decrease in the size of a quantum dot.
Received: 25.11.2011 Revised: 14.03.2012
Citation:
A. V. Shumilin, “Negative magnetoresistance in the regime of hopping conduction through $p$ states at quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:8 (2012), 462–466; JETP Letters, 95:8 (2012), 416–419
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https://www.mathnet.ru/eng/jetpl2537 https://www.mathnet.ru/eng/jetpl/v95/i8/p462
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Abstract page: | 276 | Full-text PDF : | 89 | References: | 42 | First page: | 8 |
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