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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2003, Volume 78, Issue 3, Pages 137–140
(Mi jetpl2502)
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This article is cited in 4 scientific papers (total in 4 papers)
Phase conjugation at the surfaces of optically excited CuI films
A. N. Gruzintsev Institute of Microelectronics Technology, Russian Academy of Sciences
Abstract:
The possibility of realizing an optical phase conjugation in an excited semiconductor medium is shown theoretically and experimentally. A phase conjugation is revealed for the photon energy equal to half the energy of the radiative recombination of excitons in CuI films pumped by a nitrogen laser at room temperature. The dependences of the phase-conjugation signal intensity on its spectral composition are investigated. The quadratic interaction of light and exciton electromagnetic oscillations in the semiconductor medium is suggested as an explanation of this effect.
Received: 20.06.2003
Citation:
A. N. Gruzintsev, “Phase conjugation at the surfaces of optically excited CuI films”, Pis'ma v Zh. Èksper. Teoret. Fiz., 78:3 (2003), 137–140; JETP Letters, 78:3 (2003), 106–109
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https://www.mathnet.ru/eng/jetpl2502 https://www.mathnet.ru/eng/jetpl/v78/i3/p137
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Abstract page: | 187 | Full-text PDF : | 71 | References: | 55 |
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