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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2012, Volume 95, Issue 5, Pages 283–289
(Mi jetpl2456)
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CONDENSED MATTER
Nature of contrast in Ge/Si(111) layers in scanning tunneling microscopy in the presence of Bi and Sb surfactants
R. A. Zhachuka, B. Z. Olshanetskya, J. Coutinhob a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
b University of Aveiro
Abstract:
It is known that the use of Bi surfactant (unlike Sb) upon the growth of Ge layers on Si(111) increases the contrast between Ge and Si atoms in a scanning tunneling microscope. This makes it possible to distinguish the Ge and Si surfaces. This effect is studied using computer simulation based on the density functional theory. To explain the observed difference between the Ge and Si layers, both structural and electronic effects are considered. The local density of electronic states, as well as the corresponding decay length to vacuum, has been calculated for each of the surfaces. The simulation results have been compared to the previous scanning tunneling microscopy data.
Received: 02.02.2012
Citation:
R. A. Zhachuk, B. Z. Olshanetsky, J. Coutinho, “Nature of contrast in Ge/Si(111) layers in scanning tunneling microscopy in the presence of Bi and Sb surfactants”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:5 (2012), 283–289; JETP Letters, 95:5 (2012), 259–265
Linking options:
https://www.mathnet.ru/eng/jetpl2456 https://www.mathnet.ru/eng/jetpl/v95/i5/p283
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Abstract page: | 223 | Full-text PDF : | 47 | References: | 39 | First page: | 4 |
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