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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2012, Volume 95, Issue 4, Pages 216–218
(Mi jetpl2444)
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This article is cited in 15 scientific papers (total in 15 papers)
CONDENSED MATTER
Mechanism of the antihysteresis behavior of the resistivity of graphene on a Pb(Zr$_x$Ti$_{1-x}$)O$_3$ ferroelectric substrate
M. V. Strikha Institute of Semiconductor Physics NAS, Kiev
Abstract:
A numerical model has been proposed to explain the antihysteresis behavior of the resistivity of graphene on a Pb(Zr$_x$Ti$_{1-x}$ )O$_3$ ferroelectric substrate with a change in the gate voltage. The model takes into account the screening of the electric field in the substrate by electrons trapped in states connected with the graphene-ferroelectric interface and describes the previously obtained experimental dependences. The estimates can be important for creating elements of new-generation energy-independent memory using two stable resistivity values that appear in the antihysteresis effect; logical $0$ and $1$ are assigned to these two values.
Received: 11.01.2012
Citation:
M. V. Strikha, “Mechanism of the antihysteresis behavior of the resistivity of graphene on a Pb(Zr$_x$Ti$_{1-x}$)O$_3$ ferroelectric substrate”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:4 (2012), 216–218; JETP Letters, 95:4 (2012), 198–200
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https://www.mathnet.ru/eng/jetpl2444 https://www.mathnet.ru/eng/jetpl/v95/i4/p216
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Abstract page: | 286 | Full-text PDF : | 82 | References: | 62 | First page: | 11 |
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